发明名称 |
Nonvolatile memory transistor, device including the same and method of operating the transistor |
摘要 |
Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor includes a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic. |
申请公布号 |
EP2833410(A2) |
申请公布日期 |
2015.02.04 |
申请号 |
EP20140178404 |
申请日期 |
2014.07.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE, MYOUNG-JAE;CHO, SEONG-HO;KIM, HO-JUNG;PARK, YOUNG-SOO;SEO, DAVID;YOO, IN-KYEONG |
分类号 |
H01L29/78;G06N3/02;H01L29/40;H01L29/51 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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