发明名称 |
シリコンカーバイド層を形成することによる微小電気機械システムのスティクションの低減 |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a mechanism for reducing stiction-related interactions of MEMS devices without decreasing sensitivity.SOLUTION: A microelectromechanical systems (MEMS) device includes: a fixed surface including a first silicon layer formed over a substrate, and a first insulating layer formed over at least a portion of the first silicon layer; a movable body including a second silicon layer providing a major surface facing the fixed surface; and a uniform silicon carbide layer formed on at least one of the first silicon layer and the major surface of the second silicon layer.</p> |
申请公布号 |
JP2015020273(A) |
申请公布日期 |
2015.02.02 |
申请号 |
JP20140118736 |
申请日期 |
2014.06.09 |
申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
MICHAEL D TURNER;MONTEZ RUBEN B |
分类号 |
B81B3/00;B81C1/00;G01P15/125 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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