| 摘要 |
本发明之成膜装置的清理方法包含：清理处理室内部以及处理室内部所收纳之构件的第1步骤；清理处理室内部以及构件各自的下部的第2步骤；以及清理气体供给通道内部的第3步骤。该第1步骤，将压力设定在第1压力带，将温度设定在第1温度带，并从气体供给通道供给清理气体；该第2步骤，将压力设定在比第1压力带更高的第2压力带，并一边将温度上升到比第1温度带更高的第2温度带，一边从气体供给通道供给清理气体；该第3步骤，将压力设定在比第2压力带更低的第3压力带，并一边将温度维持在第2温度带，一边从气体供给通道供给清理气体。; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel. |
