发明名称 |
LIGHT EMITTING DEVICE GROWN ON A SILICON SUBSTRATE |
摘要 |
A method according embodiments of the invention includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a III-nitride light emitting layer disposed between an n-type region and a p-type region. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured. |
申请公布号 |
EP2828899(A1) |
申请公布日期 |
2015.01.28 |
申请号 |
EP20130721400 |
申请日期 |
2013.03.18 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
SINGH, RAJWINDER;EPLER, JOHN, EDWARD |
分类号 |
H01L33/16;H01L33/12;H01L33/32;H01L33/44 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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