| 摘要 |
A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate, and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state.During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface. |
