发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE |
摘要 |
An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 μm is 1 aA or less. |
申请公布号 |
US2015021601(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201414508083 |
申请日期 |
2014.10.07 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
KIMURA Hajime;UMEZAKI Atsushi;YAMAZAKI Shunpei |
分类号 |
H01L27/12;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |