| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in breakdown voltage and can be manufactured with high yield.SOLUTION: A semiconductor device 1 comprises: a vertical structure in which Ntype source regions 15 and an Ntype drift region 13 are arranged at a distance across P type body regions 12 in a vertical direction perpendicular to a surface 9 (principal surface) of an epitaxial layer 8; a gate insulation film 19 formed on the epitaxial layer 8; gate electrodes 20 which are formed on the gate insulation film and opposed to the body regions 12, respectively; and Ptype implanted regions 21 each of which is formed (in an inter-body region 16) between the body regions 12 adjacent to each other by implantation of a P type impurity into the epitaxial layer 8. |
