| 发明名称 |
JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE SUBSTRATE BY REVERSE-BIAS JUNCTION |
| 摘要 |
A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. |
| 申请公布号 |
US2015021553(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414507044 |
申请日期 |
2014.10.06 |
| 申请人 |
Intel Corporation |
发明人 |
CAPPELLANI ANNALISA;KUHN KELIN J.;RIOS RAFAEL;Rakshit Titash;Mudanai Sivakumar |
| 分类号 |
H01L29/775;H01L29/66;H01L29/06 |
主分类号 |
H01L29/775 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor device comprising:
a bulk substrate; a semiconductive body extending away from the substrate and including a channel region and adjacent source and drain regions; a gate electrode above the channel region; and a reverse-bias junction between the semiconductive body and the bulk semiconductive substrate. |
| 地址 |
Santa Clara CA US |
