| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A nonvolatile semiconductor memory device comprises a memory cell array, a staircase voltage generator, and a decode and level shift circuit. The memory cell array comprises a plurality of memory cells and a plurality of bit lines coupled to the plurality of memory cells. The staircase voltage generator generates a staircase voltage having a staircase waveform that varies in at least two steps. The decode and level shift circuit selects one of said plurality of bit lines and applies the staircase voltage as a program voltage to the selected bit line. |
| 申请公布号 |
US2015023109(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201313947196 |
申请日期 |
2013.07.22 |
| 申请人 |
Elite Semiconductor Memory Technology Inc. |
发明人 |
Tsai Cheng-Hung |
| 分类号 |
G11C16/24;G11C16/30 |
主分类号 |
G11C16/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile semiconductor memory device comprising:
a memory cell array comprising a plurality of memory cells and a plurality of bit lines coupled to the plurality of memory cells; a staircase voltage generator for generating a staircase voltage having a staircase waveform that varies in at least two steps; and a decode and level shift circuit for selecting one of said plurality of bit lines and applying the staircase voltage as a program voltage to the selected bit line. |
| 地址 |
Hsinchu TW |
