| 摘要 |
Methods and systems are disclosed for fabricating electrically programmable link structures by fabricating a first conductor, which comprises a refractory conductive material, then fabricating an insulative link material over the refractory conductive material and, subsequently, depositing an upper conductive material over the link material. In use, an electrical path can be formed between the first and second conductive elements by applying a voltage between such elements across at least one selected region of the insulator, such that the insulative link material is transformed in the region and rendered conductive to form an electrical signal path. The link material is preferably a silicon oxide insulator and can also include one or more protective barrier layers to physically separate the oxide from the upper and lower conductive elements. Nitrides are particularly useful as protective barrier layers.
|
