| 摘要 |
Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof. |
| 主权项 |
1. A sputtering target capable of suppressing generation of particles, comprising a target body having an exposed sputtering face consisting of a target surface having a center-line average surface roughness, Ra, of 0.1 μm or less, a ten-point average roughness, Rz, of 0.4 μm or less, an average length of roughness motif, AR, of 120 μm or less, and an average length of waviness motif AW of 1500 μm or more, said target body being made of a first substance forming a matrix phase of said target body, said target body containing at least one second substance forming at least one granular phase dispersed within said matrix phase at a volume percentage of 1 to 50% of a total volume of said target body, said matrix phase having a Vickers hardness of 400 Hv or less and being ductile relative to said at least one granular phase which has a Vickers hardness greater than that of said matrix phase and which is brittle relative to said matrix phase. |
