发明名称 |
Multigate structure formed with electroless metal deposition |
摘要 |
A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure. |
申请公布号 |
US8936978(B2) |
申请公布日期 |
2015.01.20 |
申请号 |
US201012955388 |
申请日期 |
2010.11.29 |
申请人 |
International Business Machines Corporation |
发明人 |
Haensch Wilfried;Lavoie Christian;Ouyang Christine Qiqing;Shao Xiaoyan;Solomon Paul M.;Zhang Zhen;Yang Bin |
分类号 |
H01L29/06;H01L29/417 |
主分类号 |
H01L29/06 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP ;Percello, Esq. Louis J. |
主权项 |
1. A process of forming a multigate structure comprising:
providing a plurality of ultra-thin silicon or carbon bodies of less than 10 nanometers thick on a semiconductor substrate, forming multigate structures on the substrate, wherein the multigate structures comprise a plurality of gate electrodes; forming dielectric spacers electrically isolating the multigate structures from the ultra-thin silicon or carbon bodies, electrolessly depositing metallic layer selectively on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and on the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, wherein the electrolessly deposited metallic layer and ultra-thin silicon or carbon bodies form source and drain regions; and wherein the electrolessly depositing employs a electroless plating solution that comprises a pH adjusting agent, a buffer, a complexing agent, a stabilizer, and one or more surfactants and wherein the electroless plating solution during the deposition is at a temperature of about 40° C. to about 95° C.; which process further comprises providing a silicide layer of at least 2 nanometers and less than 20 nanometers thickness located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies intermediate the electrolessly deposited metallic layer. |
地址 |
Armonk NY US |