| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic treatment solution for patterning a chemically amplified resist film, which can reduce generation of particles, particularly in a negative pattern forming method for forming a fine pattern (for example, 30 nm node or less) using an organic developing solution, and a housing container of an organic treatment solution for patterning a chemically amplified resist film, and to provide a pattern forming method, a method for manufacturing an electronic device, and an electronic device using the above solution and the container.SOLUTION: The organic treatment solution for patterning a chemically amplified resist film contains an alkylolefin having 22 or less carbon atoms by 1 ppm or less, and has a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn. The solution is used for the pattern forming method, the method for manufacturing an electronic device, and the electronic device. |
