| 摘要 |
A film-forming apparatus includes a heat generator exposed to a film-forming gas drawn into a chamber to generate film formation species. A film-forming gas supply system supplies the film-forming gas into the chamber. A control unit sets the heat generator in a non-heated state during a cleaning process that discharges a film formation residue from the chamber. A cleaning gas supplying system supplies a cleaning gas including ClF3 into the chamber. A temperature adjustment unit adjusts the chamber to a target temperature from 100° C. or higher to 200° C. or less in the cleaning process. A discharge system discharges a reaction product produced by a reaction between the film formation residue and the cleaning gas from the chamber. |
