| 摘要 |
<p>The present invention relates to a thin film depositing apparatus. The thin film depositing apparatus according to the present invention includes a chamber which includes a deposition space inside, a substrate support unit which is formed in the chamber and receives a substrate, a processing gas supply channel which supplies processing gas to the substrate, two or more activation channels which includes an opening part to which the processing gas sprayed on the substrate from the processing gas supply channel is inputted on the lower side thereof, activates the processing gas by the top side thereof which is closed, and are adjacently arranged, a gas supply unit which includes a gas activating unit which is formed between two adjacent activation channels and activates the processing gas in the activation channel.</p> |
