发明名称 |
Strained MOS Device and Methods for Forming the Same |
摘要 |
A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the semiconductor substrate and adjacent the gate stack. The stressor comprises at least a first portion with a first top surface lower than the top surface of the semiconductor substrate. |
申请公布号 |
US2013323900(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313962688 |
申请日期 |
2013.08.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KUAN TA-MING;KO CHIH-HSIN;LEE WEN-CHIN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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