发明名称 Strained MOS Device and Methods for Forming the Same
摘要 A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the semiconductor substrate and adjacent the gate stack. The stressor comprises at least a first portion with a first top surface lower than the top surface of the semiconductor substrate.
申请公布号 US2013323900(A1) 申请公布日期 2013.12.05
申请号 US201313962688 申请日期 2013.08.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 KUAN TA-MING;KO CHIH-HSIN;LEE WEN-CHIN
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
主权项
地址