发明名称 Array substrate and display device comprising the same
摘要 An array substrate, which is formed with a gate electrode (2), a source electrode (5), a drain electrode (6), a gate insulating layer (3), an active layer (4) and a passivation layer (9) in a thin film transistor region, and with the gate insulating layer (3), a pixel electrode (7), the passivation layer (9) and a common electrode (8) in a pixel electrode pattern region, and a color resin layer (11) is formed between the passivation layer (9) and the common electrode (8). Since the color resin layer (11) for planarization is formed on the passivation layer (9), the horizontal driving manner may be suitably applied in order to reduce light leakage, to improve contrast ratio and aperture ratio of a panel and to lower production costs.
申请公布号 US8933472(B2) 申请公布日期 2015.01.13
申请号 US201313996318 申请日期 2013.01.09
申请人 BOE Technology Group Co., Ltd. 发明人 Song Youngsuk;Yoo Seongyeol;Choi Seungjin
分类号 H01L29/20;H01L33/00;H01L27/12;G02F1/1362;H01L29/786 主分类号 H01L29/20
代理机构 代理人
主权项 1. An array substrate, comprising a gate line and a data line that define a pixel region including a thin film transistor region and a pixel electrode pattern region, wherein in the thin film transistor region a gate electrode, a source electrode, a drain electrode, a gate insulating layer, an active layer and a passivation layer are provided, and a channel part is formed between the source electrode and the drain electrode and recessed to the inner of the active layer; in the pixel electrode pattern region the gate insulating layer, a pixel electrode, the passivation layer and a common electrode are formed, and a multi-dimensional electric field is formed between the common electrode and the pixel electrode when the common electrode and the pixel electrode are applied voltages, wherein a color resin layer is formed between the passivation layer and the common electrode, and wherein the color resin layer is made of a material having a dielectric constant of 3˜5 F/m and a thickness of 0.5 μm˜2 μm.
地址 Beijing CN