发明名称 Methods of fabricating large-area graphene
摘要 A method for fabricating large-area, high-quality Graphene product. Specifically, the fabrication method uses a seed layer of exfoliated Graphene in combination with a substrate and a catalyst metal layer and introduces Carbon atoms to the Graphene seed, causing growth of high-quality Graphene product. The method of the invention combines some steps of current mechanical exfoliation techniques with other steps of the CVD process and adds a new technique to the fabrication method involving seed-based catalyst of large-area Graphene product growth.
申请公布号 US8932673(B2) 申请公布日期 2015.01.13
申请号 US201213456894 申请日期 2012.04.26
申请人 发明人 Patil Vikram
分类号 C01B31/04;C23C16/00;B05D3/10 主分类号 C01B31/04
代理机构 Cloudigy Law PLLC 代理人 Cloudigy Law PLLC
主权项 1. A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of Carbon atoms; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
地址 Fort Collins CO US