发明名称 |
Methods of fabricating large-area graphene |
摘要 |
A method for fabricating large-area, high-quality Graphene product. Specifically, the fabrication method uses a seed layer of exfoliated Graphene in combination with a substrate and a catalyst metal layer and introduces Carbon atoms to the Graphene seed, causing growth of high-quality Graphene product. The method of the invention combines some steps of current mechanical exfoliation techniques with other steps of the CVD process and adds a new technique to the fabrication method involving seed-based catalyst of large-area Graphene product growth. |
申请公布号 |
US8932673(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US201213456894 |
申请日期 |
2012.04.26 |
申请人 |
|
发明人 |
Patil Vikram |
分类号 |
C01B31/04;C23C16/00;B05D3/10 |
主分类号 |
C01B31/04 |
代理机构 |
Cloudigy Law PLLC |
代理人 |
Cloudigy Law PLLC |
主权项 |
1. A method of fabricating Graphene, the method comprising:
providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of Carbon atoms; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer. |
地址 |
Fort Collins CO US |