METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

摘要

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

主权项

1. A method of manufacturing a silicon carbide single crystal, comprising the steps of:
preparing a crucible having a first side and a second side opposite to said first side; arranging a solid source material for growing silicon carbide with a sublimation method, on said first side in said crucible; arranging a seed crystal made of silicon carbide on said second side in said crucible; arranging said crucible in a heat insulating container, said heat insulating container having an opening facing said second side of said crucible; heating said crucible such that said solid source material sublimes and recrystallizes on said seed crystal; and measuring a temperature on said second side of heated said crucible through said opening in said heat insulating container, said opening in said heat insulating container having a tapered inner surface narrowed toward outside of said heat insulating container.