ISOLATION TRENCH THROUGH BACKSIDE OF SUBSTRATE

摘要

Among other things, one or more semiconductor arrangements comprising isolation trenches, and techniques for forming such isolation trenches are provided. A substrate comprises a front side surface and a backside surface. One or more devices are formed over the front side surface. A wet etch is performed to form a tapered portion of an isolation trench. A dry etch is performed to form a non-tapered portion of the isolation trench. Because both the wet etch and the dry etch are performed, etching time is reduced compared to merely using the dry etch due to the wet etch having a relatively faster etch rate than the dry etch. In an embodiment, the isolation trench provides isolation for a current leakage path associated with a device or other material formed over the front side surface. In an embodiment, metal is formed within the isolation trench for backside metallization.

主权项

1. A semiconductor arrangement, comprising:
a substrate comprising a front side surface and a backside surface; one or more devices formed over the front side surface; and an isolation trench formed through the backside surface of the substrate, the isolation trench comprising a tapered portion and a non-tapered portion, the non-tapered portion having a non-tapered width that is less than a tapered width of the tapered portion.