SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To manufacture a thin film transistor having requested characteristics without complicating a process and a device and to provide technology for manufacturing a semiconductor device having high reliability and superior electric characteristics with low cost and sufficient yield by precisely and freely controlling the characteristics of the thin film transistor. SOLUTION: In the thin film transistor, a low concentration impurity region is formed on a source region side or a drain region side of a semiconductor layer covered with a gate electrode layer. The low concentration impurity region is formed on a surface of the semiconductor layer obliquely doping with the gate electrode layer as a mask. Thus, the detailed characteristic of the thin film transistor can be controlled. COPYRIGHT: (C)2006,JPO&NCIPI