| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a storage device and the like which reduce crosstalk noise to a large extent when functioning as a multi-port memory to prevent malfunction thereby to stabilize a circuit operation. <P>SOLUTION: A semiconductor storage device 100 having a memory cell array 10 includes a first word line for selecting memory cells lying in a first direction, a second word line for selecting memory cells lying in a second direction, a pair of a first bit line and a first complementary bit line connected to the memory cell selected by the first word line, and a second bit line connected to the memory cell selected by the second word line. The second word line is arranged adjacent to the corresponding pair of first bit line and the first complementary bit line in the first direction or in a direction opposite to the first direction, when viewed from above, such as to extend in the second direction. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
