SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a method for manufacturing a semiconductor device which includes a vertical cell with a single crystal channel region. The method includes the steps of: forming a plurality of interlayer dielectric layers, a plurality of sacrificial layers, and a first capping layer on a substrate; forming a channel hole to expose a part of the surface of the substrate by passing through the first capping layer, the interlayer dielectric layers, and the sacrificial layers; conformally forming a dielectric pattern on the inner wall of the channel hole; conformally forming an amorphous channel active pattern on the surface of the exposed substrate and the dielectric pattern; forming a channel core pattern on the amorphous channel active pattern; forming an amorphous silicon layer for crystallization on the amorphous channel active pattern; forming a metal catalyst layer on the amorphous silicon layer for crystallization; and converting the amorphous silicon layer for crystallization and the amorphous channel active pattern into a single crystal silicon layer for crystallization and a single crystal channel active pattern by performing an annealing process.