发明名称 Organic light-emitting display device and method of manufacturing the same
摘要 An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
申请公布号 US9373669(B2) 申请公布日期 2016.06.21
申请号 US201514815327 申请日期 2015.07.31
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Chung Hyun-Joong;Park Jin-Seong;Jeong Jong-Han;Jeong Jae-Kyeong;Mo Yeon-Gon;Kim Min-Kyu;Ahn Tae-Kyung;Yang Hui-Won;Kim Kwang-Suk;Kim Eun-Hyun;Kang Jae-Wook;Im Jang-Soon
分类号 H01L21/00;H01L27/32;H01L29/66;H01L27/12;H01L29/786;H01L51/56;H01L51/52 主分类号 H01L21/00
代理机构 Knobbe, Martens, Olson & Bear LLP 代理人 Knobbe, Martens, Olson & Bear LLP
主权项 1. A method of manufacturing an organic light-emitting display device, the method comprising: forming a gate electrode on a substrate; forming a gate insulating layer covering the gate electrode on the substrate; forming an active layer on the gate insulating layer; forming an insulating layer covering a channel region of the active layer; forming source and drain electrodes contacting the active layer and formed on the insulating layer; and forming an organic light-emitting diode to be electrically connected to one of the source and drain electrodes, wherein the forming of the insulating layer comprises: forming a first insulating layer covering the channel region of the active layer; andforming a second insulating layer substantially comprising a metal oxide on the first insulating layer, wherein the forming of the second insulating layer comprises: forming a metal layer on the first insulating layer; andthermal-processing at least the metal layer so as to form a part of the metal layer contacting the first insulating layer as a metal oxide.
地址 Yongin, Gyeonggi-do KR