发明名称 Charge Selective Interfacial Transport Layer To Be Treated Interfacially By Polar Solvents , And Organic Electronic Device Using The Same
摘要 <p>The present invention relates to a charge selective interfacial transport layer and an organic electronic device using the same. The charge selective interfacial transport layer has high efficiency of transporting and inserting charges and selectivity resulted from an interfacial treatment using a polar solvent. More specifically, the charge selective interfacial transport layer comprises: an inorganic semiconductor layer; and a material that can induce a dipole by spontaneous polarization on an interface between the inorganic semiconductor layer and an organic active layer. The material inducing a dipole by spontaneous polarization on an interface is a polar solvent. The interface of the inorganic semiconductor layer is treated with the polar solvent. The charge selective interfacial transport layer is applied to various organic electronic devices using an organic semiconductor such as inverted polymer solar cells (iPSCs) with high efficiency, organic light emitting diodes (OLEDs), an organic memory, organic transistors (organic TFTs), and an organic sensor.</p>
申请公布号 KR101479028(B1) 申请公布日期 2015.01.06
申请号 KR20130054192 申请日期 2013.05.14
申请人 发明人
分类号 H01L51/00;H01L51/42;H01L51/50 主分类号 H01L51/00
代理机构 代理人
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