Mask and method of manufacturing array substrate using the same

摘要

A mask includes: a substrate that includes a central area and a peripheral area disposed around the central area; and lenses disposed in rows and columns, in the central area and the peripheral area. The lenses of opposing sides of the peripheral area may be disposed in different rows or columns. For a given amount of input light, the lenses of the peripheral area may focus less light on a substrate than the lenses of the central area. The mask may be disposed over the substrate in different positions, and then the substrate may be irradiated through the mask, while the mask is in each of the positions. The peripheral portion of the mask may be disposed over the same area of the substrate, while the mask is in different ones of the positions.

主权项

1. A method of manufacturing an array substrate, the method comprising:
forming gate wiring and gate electrodes connected to the gate wiring, on a base substrate; coating amorphous silicon layers on the gate electrodes; disposing a mask at different positions over the substrate, the mask comprising a central area, a peripheral area disposed around the central area, and lenses disposed in the central area and the peripheral area; irradiating the amorphous silicon layers through the mask, while the mask is at each of the positions, to sequentially crystallize the amorphous silicon layers; and forming source electrodes and drain electrodes on the crystallized silicon layers, wherein the peripheral area is disposed above a group of the same semiconductor layers, while the mask is in a first one of the positions and in a second one of the positions.