Image-sensor device structure and method of manufacturing

摘要

Embodiments of an image-sensor device structure and a method of manufacturing thereof are provided. The image-sensor device structure includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The image-sensor device structure also includes an interconnect structure over the semiconductor substrate, and the interconnect structure includes a transparent dielectric layer over the light-sensing region. The transparent dielectric layer has an optical transmittance ranging from about 90% to about 97%.

主权项

1. An image-sensor device structure, comprising:
a semiconductor substrate; a light-sensing region in the semiconductor substrate; an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a transparent dielectric layer over the light-sensing region, and the transparent dielectric layer has an optical transmittance higher than silicon oxide and is in contact with the light-sensing region; and a recess extending from a surface of the interconnect structure towards the light-sensing region, wherein the recess penetrates through a dielectric layer of the interconnect structure over the transparent dielectric layer and exposes the transparent dielectric layer without penetrating through the transparent dielectric layer, wherein the optical transmittance of the transparent dielectric layer is higher than an optical transmittance of the dielectric layer.