Semiconductor device and method of manufacturing the same

摘要

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substract, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

主权项

1. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substate; a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces to the first build-up substrate and being electrically connected to the wiring substrate via a plurality of first bump electrodes; a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and a plurality of second bump electrodes being disposed over the second build-up substrate of the wiring substrate, wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers formed over a top surface and bottom surface of the first insulating layer are electrically connected each other via the plurality of first through holes, respectively, wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a plurality of second wiring layers formed over a surface of the second insulating layer and in a plurality of second through holes respectively, wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, and a plurality of third wiring layers formed over a surface of the third insulating layer and in a plurality of third through holes, respectively, wherein the first insulating layer of the core substrate, the second insulating layer of the first build-up substrate, and the third insulating layer of the second build-up substrate have a resin layer and a glass cloth, respectively, wherein the glass cloth is woven a glass fiber in a shape of a cloth, and wherein a thickness of the glass cloth contained in each of the first and second build-up substrates is thinner than a thickness of the glass cloth contained in the core substrate.