SEMICONDUCTOR MEMORY DEVICE AND REPAIR METHOD THEREOF

摘要

A semiconductor memory device is provided which includes a memory cell group and a fuse cell group including at least one fuse cell to store a failed address corresponding to a defective memory cell in the memory cell group; a spare cell group including a spare memory cell configured to replace the defective memory cell included in the memory cell group; a data sensing/selection circuit configured to read data stored in the memory cell group and the spare cell group in response to an activation of the word line; a fuse sense amplifier configured to read the failed address in response to the activation of the word line; and a repair logic circuit configured to control the data sensing/selection circuit in response to the failed address such that the defective memory cell in the memory cell group is replaced by the spare memory cell.

主权项

1. A semiconductor memory device, comprising:
a row decoder; a memory cell group coupled to the row decoder by a word line, the memory cell group including a plurality of memory cells; a fuse cell group coupled to the row decoder by the word line, the fuse cell group including at least one fuse cell configured to store a failed address corresponding to a defective memory cell in the memory cell group; a spare cell group including a spare memory cell configured to replace the defective memory cell in the memory cell group; a data sensing/selection circuit configured to read data stored in the memory cell group and the spare cell group in response to an activation of the word line; a fuse sense amplifier configured to read the failed address in response to the activation of the word line; and a repair logic circuit configured to control the data sensing/selection circuit in response to the failed address such that the defective memory cell in the memory cell group is replaced by the spare memory cell.