| 发明名称 |
THIN BODY SWITCH TRANSISTOR |
| 摘要 |
An integrated recessed thin body field effect transistor (FET) and methods of manufacture are disclosed. The method includes recessing a portion of a semiconductor material. The method further includes forming at least one gate structure within the recessed portion of the semiconductor material. |
| 申请公布号 |
US2015001622(A1) |
申请公布日期 |
2015.01.01 |
| 申请号 |
US201313929256 |
申请日期 |
2013.06.27 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Abou-Khalil Michel J.;Botula Alan B.;Jaffe Mark D.;Joseph Alvin J.;Slinkman James A. |
| 分类号 |
H01L29/786;H01L21/28 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
recessing a portion of a semiconductor material via an oxidation and etching process; and forming at least one gate structure within the recessed portion of the semiconductor material. |
| 地址 |
Armonk NY US |
