| 摘要 |
本发明涉及一种薄膜电晶体基板的制造方法，其包括：提供一基板；在该基板上依次形成栅极、栅极绝缘层、半导体层、蚀刻阻挡层、透明导电层及金属层；提供一光阻层，该光阻层覆盖在该金属层上，利用一光罩对该光阻层进行曝光显影，以形成图案化光阻层，该图案化光阻层邻近半导体层的部分较厚，远离半导体层的部分较薄，再对金属层进行蚀刻，直到暴露出部分蚀刻阻挡层；去除剩余的较薄部分的光阻层，以暴露出部分金属层；对暴露在外的金属层进行蚀刻，以暴露出部分该透明导电层；以及去除该光阻层。; forming a gate electrode, a gate insulating layer, a semiconductor layer, an etching stopper layer, a transparent conductive layer and a metal layer on the substrate sequentially; forming a photo-resist layer on the metal layer, the photo-resist layer being exposed by a photo-mask to form a photo-resist pattern, and etching the metal layer until the etching stopper layer is exposed; removing part of the photo-resist pattern which is far away from the semiconductor layer, until part of the metal layer is exposed; etching the exposed metal layer to expose part of the transparent conductive layer; and removing the photo-resist pattern. |
