SOLID STATE IMAGING ELEMENT AND RANGE IMAGING DEVICE

摘要

Provided is a solid state imaging element for use in a range imaging device, the element having: a plurality of PD (21) disposed on a semiconductor substrate, for generating charge through exposure to light; a plurality of readout gates (22), arranged in one-to-one correspondence to the plurality of PD (21), for reading out charges generated by the plurality of PD (21); and a plurality of bonding pads (9) for receiving an exposure control signal instructing exposure by the plurality of PD (21). A portion of the plurality of readout gates (22) are arranged to left side of the corresponding PD (21), and read out to the left the charges generated by the corresponding PD (21), while the others of the plurality of readout gates (22) are arranged to right side of the corresponding PD (21), and read out to the right the charges generated by the corresponding PD (21). The plurality of bonding pads (9) are arranged at top and bottom, or at top, bottom, left, and right, of an imaging area (8) that includes the plurality of PD (21) and the plurality of readout gates (22).