SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a transistor with excellent electric characteristics, and to provide a semiconductor device having a high opening ratio and including a capacitative element, and capable of increasing charge capacity.SOLUTION: A semiconductor device comprises: a gate electrode; an oxide semiconductor film overlapping the gate electrode; an oxide insulating film in contact with the oxide semiconductor film; a first barrier film to oxygen provided between the gate electrode and the oxide semiconductor film; and a second barrier film to oxygen in contact with the first barrier film to oxygen. The oxide semiconductor film and the oxide insulating film are provided inside the first barrier film to oxygen and the second barrier film to oxygen.