SEMICONDUCTOR MEMORY APPARATUS AND FABRICATION METHOD THEREOF

摘要

Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.

主权项

1. A semiconductor memory apparatus, comprising:
a semiconductor substrate in which a cell area and a peripheral area are defined; a plurality of pillars formed in the cell area of the semiconductor substrate to a first depth; a stepped part formed in the peripheral area to a height substantially the same as the first depth; a recessed part formed in the stepped part to a second depth; and a core switching device formed in the recessed part.