SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method for a semiconductor device first provides a substrate having at least a first transistor formed thereon. The first transistor includes a first conductivity type. The first transistor further includes a first metal gate and a protecting layer covering sidewalls of the first metal gate. A portion of the first metal gate is removed to form a first recess and followed by removing a portion of the protecting layer to form a second recess. Then, an etch stop layer is formed in the second recess.

主权项

1. A manufacturing method for a semiconductor device comprising:
providing a substrate having at least a first transistor of a first conductivity type formed thereon, the first transistor comprising a first metal gate and a protecting layer covering sidewalls of the first metal gate; removing a portion of the first metal gate to form a first recess exposing a portion of the protecting layer; removing a portion of the protecting layer exposed by the first recess to form a second recess; and forming an etch stop layer in the second recess.