Method of forming a semiconductor device

摘要

A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming spacers adjoining sidewalls of the gate stacks, wherein at least one of the spacers extends beyond an edge the isolation feature. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an isolation feature in a substrate; forming a first gate stack and a second gate stack over the substrate, wherein the first gate stack is substantially atop the isolation feature; performing a pre-amorphous implantation process on the substrate, thereby forming amorphized regions; forming spacers adjoining sidewalls of the first gate stack and the second gate stack, wherein one of the spacers adjacent to the second gate stack extends beyond an edge of the isolation feature; forming a stress film over the substrate; performing an annealing process on the substrate; removing the stress film; removing the spacers after removing the stress film; and forming gate spacers adjoining sidewalls of the first gate stack after removing the spacers, wherein the gate spacers have a width less than a width of the spacers.