| 发明名称 | Charged particle lithography system with intermediate chamber | ||
| 摘要 | A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam. | ||
| 申请公布号 | US8916837(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201314061847 | 申请日期 | 2013.10.24 |
| 申请人 | Mapper Lithography IP B.V. | 发明人 | Dinu-Gürtler Laura;Urbanus Willem Henk;Wieland Marco Jan-Jaco;Steenbrink Stijn Willem Herman Karel |
| 分类号 | H01J37/147;H01J37/10;G03B27/26;G21K5/04;H01J37/317;H01J37/301;H01J37/16;B82Y10/00;H01J37/09;H01J37/18;B82Y40/00 | 主分类号 | H01J37/147 |
| 代理机构 | Hoyng Monegier LLP | 代理人 | Hoyng Monegier LLP ;Owen David P. |
| 主权项 | 1. A charged particle lithography system for transferring a pattern onto the surface of a target, comprising: a source for generating a charged particle beam; a first chamber housing the source; a collimating system for collimating the charged particle beam; a second chamber housing the collimating system; and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam. | ||
| 地址 | Delft NL | ||