Method of manufacturing semiconductor element

摘要

A method of manufacturing a semiconductor element includes forming an element structure layer having a semiconductor layer, on a first substrate. The method also includes forming a first bonding layer on the element structure layer. The method also includes forming a second bonding layer on a second substrate. The method also includes performing heating pressure-bonding on the first and second bonding layers, with the first and second bonding layers facing each other. One of the first bonding layer and the second bonding layer is an AU layer, and the other is an AuSn layer. The AuSn layer has a surface layer having an Sn content of between 85 wt % (inclusive) and 95 wt % (inclusive).

主权项

1. A method of manufacturing a semiconductor element, comprising:
forming an element structure layer including a semiconductor layer, on a first substrate; forming a first bonding layer on the element structure layer to provide a first laminated body; forming a second bonding layer on a second substrate to provide a second laminated body; and performing heating pressure-bonding on the first and second laminated bodies, with the first and second bonding layers facing each other, to provide a combined semiconductor element having a bonding portion that is made by said heating pressure-bonding of the first and second laminated bodies, wherein one of the first bonding layer and the second bonding layer is a layer of Au, the other is a layer comprising AuSn, and the layer comprising AuSn comprises a surface layer and an underlayer, said surface layer having a Sn content in a range of between 85 wt % and 95 wt %, and sais underlayer comprising AuSn and having a Sn content lower than the Sn content of said surface layer; and wherein said heating pressure-bonding is performed at a temperature equal to or below a melting point of Au and the underlayer.