Method for manufacturing silicon single crystal wafer and annealed wafer

摘要

The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.

主权项

1. A method for manufacturing a silicon single crystal wafer, wherein
a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes, and a density of crystal defects having a defect size of 15 nm or more in a bulk of the silicon single crystal wafer is adjusted to 2×106/cm3 or less by performing the heat treatment.