| 摘要 |
<p>An objective is to improve element characteristics and reliability of an element even when a semiconductor layer is provided over a gate electrode layer, a source electrode layer, and a drain electrode layer. A structure has a gate electrode layer; a gate insulating layer provided over the gate electrode layer; a source electrode layer and a drain electrode layer which are provided so as to overlap with part of the gate electrode layer with the gate insulating layer interposed therebetween; and a semiconductor layer provided over the gate insulating layer, the source electrode layer, and the drain electrode layer. In the structure, the thickness of the gate insulating layer located in a region between the source electrode layer and the drain electrode layer becomes smaller than the thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer.</p> |
