发明名称 Semiconductor memory apparatus and method of controlling external voltage using the same
摘要 A semiconductor memory apparatus according to the embodiment includes: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured to respond to a test signal to determine whether the external connection terminal is connected to the fuse unit.
申请公布号 US8908448(B2) 申请公布日期 2014.12.09
申请号 US201314018732 申请日期 2013.09.05
申请人 SK Hynix Inc. 发明人 Kim Yeon Uk;Park Jae Boum
分类号 G11C5/14;G11C29/00 主分类号 G11C5/14
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A semiconductor memory apparatus, comprising: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured—to—respond to a test signal to determine whether the external connection terminal is connected to the fuse unit, wherein the interruption circuit unit includes: a voltage pump unit configured to pump an internal voltage to generate a pumping voltage; a control unit configured to be applied with the pumping voltage and respond to the test signal to output the pumping voltage or the internal voltage; and a switch unit configured to respond to the pumping voltage or the internal voltage to determine whether the external connection terminal is connected to the fuse unit.
地址 Gyeonggi-do KR