发明名称 |
Semiconductor memory apparatus and method of controlling external voltage using the same |
摘要 |
A semiconductor memory apparatus according to the embodiment includes: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured to respond to a test signal to determine whether the external connection terminal is connected to the fuse unit. |
申请公布号 |
US8908448(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201314018732 |
申请日期 |
2013.09.05 |
申请人 |
SK Hynix Inc. |
发明人 |
Kim Yeon Uk;Park Jae Boum |
分类号 |
G11C5/14;G11C29/00 |
主分类号 |
G11C5/14 |
代理机构 |
William Park & Associates Patent Ltd. |
代理人 |
William Park & Associates Patent Ltd. |
主权项 |
1. A semiconductor memory apparatus, comprising:
an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured—to—respond to a test signal to determine whether the external connection terminal is connected to the fuse unit, wherein the interruption circuit unit includes: a voltage pump unit configured to pump an internal voltage to generate a pumping voltage; a control unit configured to be applied with the pumping voltage and respond to the test signal to output the pumping voltage or the internal voltage; and a switch unit configured to respond to the pumping voltage or the internal voltage to determine whether the external connection terminal is connected to the fuse unit. |
地址 |
Gyeonggi-do KR |