发明名称 Semiconductor device and method for manufacturing the same
摘要 Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.
申请公布号 US8906716(B2) 申请公布日期 2014.12.09
申请号 US201314023641 申请日期 2013.09.11
申请人 Kabushiki Kaisha Toshiba 发明人 Shimokawa Kazuo;Koyanagawa Takashi;Miyagi Takeshi;Happoya Akihiko;Higuchi Kazuhito;Kitani Tomoyuki
分类号 H01L33/00;H01L33/62;H01L33/50;H01L33/38;H01L33/44 主分类号 H01L33/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for manufacturing an optical semiconductor device, comprising: forming a plurality of light-emitting layers on a substrate; forming a plurality of conductive portions on each of the light-emitting layers, the plurality of conductive portions being used to cause a current for exciting the light-emitting layers to flow through the light-emitting layers; providing a sealing material between the plurality of conductive portions to form a sealing layer; removing the substrate while supporting the light-emitting layers by a support body which includes the conductive portions and the sealing layer; and forming a fluorescent layer containing phosphor particles on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions are formed after removing the substrate.
地址 Minato-ku JP