| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an exposure method advantageous for suppressing influences upon accuracy of alignment utilizing a measurement result of an alignment mark even in the case where a formation condition of the mark is changed.SOLUTION: An alignment mark on a substrate is formed by the steps of: defining a third pattern which is formed with one of second patterns formed to hold a first pattern therebetween along one of wall parts of the first pattern as a mask as a third A pattern; defining a third pattern formed with the other of the second patterns along the other of the wall parts of the first pattern as a mask as a third B pattern; forming the third B pattern by removing the third A pattern; and forming the third A pattern by removing the third B pattern. The exposure method includes a step of calculating a position of an exposure target area on the substrate by weighting (S103) a first measurement (S101) obtained by detecting an alignment mark including the third A pattern and a second measurement (S102) obtained by detecting an alignment mark including the third B pattern.</p> |
