| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a manufacturing method of the same, which can reduce channel resistance between electrodes.SOLUTION: A semiconductor storage device comprises: a lower gate layer; a laminate having a plurality of electrode layers and a plurality of insulation layers, which are alternately laminated on the lower gate layer; a channel body extending through the laminate from the electrode layer, a top layer, toward the lower gate layer; and a memory film which is provided between the electrode layer and the channel body, and includes a charge storage film. The electrode layer has a stepped part where a level difference is formed in a lamination direction of the laminate. The channel body and the memory film penetrate the stepped part. |
