发明名称 |
TRENCH FILLING METHOD AND PROCESSING APPARATUS |
摘要 |
The present disclosure provides a method for filling a trench formed in an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed. |
申请公布号 |
KR20140139413(A) |
申请公布日期 |
2014.12.05 |
申请号 |
KR20140061100 |
申请日期 |
2014.05.21 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUZUKI DAISUKE;TAKAHASHI KAZUYA;OKADA MITSUHIRO;KOMORI KATSUHIKO;ONODERA SATOSHI |
分类号 |
H01L21/762;H01L21/324;H01L21/822 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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