发明名称 DETECTION DEVICE AND DETECTION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a detection device capable of achieving excellent adhesion between an impurity semiconductor part and a transparent conductive oxide and excellent dark current characteristics.SOLUTION: A detection device includes a conversion element 12 having a pixel electrode 122 composed of a transparent conductive oxide, an impurity semiconductor part 123, and a semiconductor part 125 in this order on a substrate 100 from the substrate 100 side. The impurity semiconductor part 123 includes a first impurity semiconductor layer 123a including a portion in contact with the pixel electrode 122 and a second impurity semiconductor layer 124 located closer to the semiconductor part 125 than the first impurity semiconductor layer 123a. The impurity concentration of the second impurity semiconductor layer 124 is higher than the impurity concentration of the first impurity semiconductor layer 123a.
申请公布号 JP2014225526(A) 申请公布日期 2014.12.04
申请号 JP20130103326 申请日期 2013.05.15
申请人 CANON INC 发明人 YOKOYAMA KEIGO;WATANABE MINORU;OFUJI MASAHITO;KAWANABE JUN;FUJIYOSHI KENTARO;WAYAMA HIROSHI
分类号 H01L27/146;H01L27/144;H01L31/08;H04N5/361;H04N5/374 主分类号 H01L27/146
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