| 发明名称 |
Methods of Forming a Substrate Opening |
| 摘要 |
A method of forming a substrate opening includes forming a plurality of side-by-side openings in a substrate. At least some of immediately adjacent side-by-side openings are formed in the substrate to different depths relative one another. Walls that are laterally between the side-by-side openings are removed to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls. |
| 申请公布号 |
US2014357086(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201313904933 |
申请日期 |
2013.05.29 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Kiehlbauch Mark |
| 分类号 |
H01L21/3065;H01L21/768 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and removing walls that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls. |
| 地址 |
Boise ID US |
