| 摘要 |
PROBLEM TO BE SOLVED: To provide a double-sided polishing method of a wafer and a double-sided polishing system capable of reducing equipment cost without lowering the accuracy of thickness measurement of the wafer, in particular, having a small resistivity, in such double-sided polishing as to be performed while measuring the thickness of the wafer by using a variable wavelength infrared ray laser.SOLUTION: A double-sided polishing method of a wafer and a double-sided polishing system is characterized in that, in the method of sandwiching the wafer retained by a carrier with upper and lower surface plates onto which polishing cloth is attached, rotating and turning the carrier, supplying polishing agent and polishing both surfaces of the wafer by using a plurality of double-sided polishing devices which polish both surfaces of the wafer at the same time while measuring the thickness of the wafer according to a light reflection interference method using variable wavelength infrared laser, the thickness of the wafer is measured while applying the variable wavelength infrared laser used on each of the plurality of double-sided polishing devices so as to switch the double-sided polishing device of irradiation destination from one laser beam source, and both surfaces of the wafer are polished up to a target thickness. |
