| 摘要 |
<p>A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line (6L), a first gate electrode (6E1) branched from the gate line (6L), a gate insulating film (102) formed over the substrate (101), an active layer (ACT) formed on the gate insulating film (102), a data line (DL) formed to comprise a plurality of metal layers including a first metal layer and a second metal layer formed of copper (Cu), a source electrode (SE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers, and a drain electrode (DE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers.</p> |
