MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING SAME

摘要

Provided is a magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes: a magnetic tunnel junction portion (13) having a first magnetic body (22) including a perpendicular magnetization film, an insulating layer (21), and a second magnetic body (20) serving as a storage layer including a perpendicular magnetization film which are sequentially stacked; and a thermal expansion layer (28) that is inserted into the magnetic tunnel junction portion (13). The second magnetic body (22) is deformed in a direction in which the cross section thereof increases by the thermal expansion of the thermal expansion layer (28) due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction.